【Seminar】"Quantum photonics with vanadium in 4H-SiC"

Speaker

Thomas Astner, Austrian Academy of Sciences (Austria)

Title

"Quantum photonics with vanadium in 4H-SiC"

Abstract

Spin centres in crystals, particularly in diamond and silicon carbide (SiC), are a key platform for the development of quantum technology. Among these, vanadium in SiC has recently emerged as a strong candidate for quantum photonics, ^1–6: It has an optical transition at 1.3 µm, compatible with optical fiber networks, a long-lived electron spin, and is hosted in a material that is available with high quality at an industrial scale. Our investigations have resulted in significant advances in our understanding of this remarkable system, the control of its electron spin, and the development of photonic interfaces for quantum networks⁷.

References
1.    L. SPINDLBERGER et al., “Optical Properties of Vanadium in 4 H Silicon Carbide for Quantum Technology,” Phys. Rev. Applied 12 1, 014015 (2019); 
2.    C. M. GILARDONI et al., “Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC,” New J. Phys. 23 8, 083010 (2021); 
3.    B. TISSOT et al., “Nuclear spin quantum memory in silicon carbide,” Phys. Rev. Research 4 3, 033107 (2022); 
4.    T. ASTNER et al., “Vanadium in Silicon Carbide: Telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions,” arXiv (2022); 
5.    J. HENDRIKS et al., “Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide,” arXiv (2022); 
6.    P. CILIBRIZZI et al., “Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide,” Nature Communications 14 1, 8448 (2023);
7.    J. FAIT et al., “High finesse microcavities in the optical telecom O-band,” Appl. Phys. Lett. 119 22, 221112 (2021);
8.    K. NEMOTO et al., “Photonic Architecture for Scalable Quantum Information Processing in Diamond,” Physical Review X 4 3 (2014);